ANALYSIS OF PREDICTION OF RELIABILITY OF LONG-CHANNEL FIELD-EFFECT TRANSISTORS WITH APPLICATION OF POWER-LAW DEPENDENCE OF LIFETIME TL ON SUBSTRATE CURRENT ISUB
https://doi.org/10.21683/1729-2646-2015-0-4-47-56
Abstract
This paper covers the influence of structural and technological parameters of field metal-oxidesemiconductor-transistors (MOSFET) on reliability prediction in power-law dependence of lifetime tL from substrate current of Isu. The structural and technological parameters capable to influence degradation of MOSFET instrument characteristics caused by injection of hot carriers are defined. The author would like to express his gratitude to the research supervisor, Doctor of Technical Sciences, Professor Korobov A.I. for support of the present paper and a number of important comments.
About the Author
A. N. Volkov
F.V. Lukin State Research Institute of Physical Problems
Russian Federation
Postgraduate student
Russian Federation
Postgraduate student
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Review
For citations:
Volkov A.N. ANALYSIS OF PREDICTION OF RELIABILITY OF LONG-CHANNEL FIELD-EFFECT TRANSISTORS WITH APPLICATION OF POWER-LAW DEPENDENCE OF LIFETIME TL ON SUBSTRATE CURRENT ISUB. Dependability. 2015;(4):47-56. https://doi.org/10.21683/1729-2646-2015-0-4-47-56
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ISSN 1729-2646 (Print)
ISSN 2500-3909 (Online)
ISSN 2500-3909 (Online)
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