The effect of low-intensity radiation on the speed of CMOS microcircuits
https://doi.org/10.21683/1729-2646-2024-24-3-61-66
Abstract
Aim. The degradation of CMOS microcircuits exposed to ionizing radiation was analysed. Three MOS defect formation processes at the Si-SiO2 boundary were examined. Methods. Using the example of test logic elements, the dependence of the time of conditional speed failure on the gamma dose rate was analysed. Findings. A critical defect at the Si-SiO2 boundary was identified. Conclusions. The approach proposed in the paper allows identifying the causes of CMOS microcircuit failures. Calculated failure times for three dose rates are presented.
About the Authors
A. V. Kuzminova
National Research Nuclear University (MEPhI)
Russian Federation
Russian Federation
Kuzminova Alla Vladimirovna, Candidate of Engineering, Senior Lecturer, Department of Computer Systems of Information Technology
Moscow
V. D. Popov
National Research Nuclear University (MEPhI)
Russian Federation
Russian Federation
Popov Viktor Dmitrievich, Doctor of Engineering, Professor, Department of Nanotechnology in Electronics, Spintronics, and Photonics of the Educational Programs Office
Moscow
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Review
For citations:
Kuzminova A.V., Popov V.D. The effect of low-intensity radiation on the speed of CMOS microcircuits. Dependability. 2024;24(3):61-66. (In Russ.) https://doi.org/10.21683/1729-2646-2024-24-3-61-66
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ISSN 1729-2646 (Print)
ISSN 2500-3909 (Online)
ISSN 2500-3909 (Online)
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