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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">sustain</journal-id><journal-title-group><journal-title xml:lang="ru">Надежность</journal-title><trans-title-group xml:lang="en"><trans-title>Dependability</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-2646</issn><issn pub-type="epub">2500-3909</issn><publisher><publisher-name>RAMS Journal Limited liability company</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.21683/1729-2646-2015-0-4-47-56</article-id><article-id custom-type="elpub" pub-id-type="custom">sustain-102</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>СТРУКТУРНАЯ НАДЕЖНОСТЬ. ТЕОРИЯ И ПРАКТИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>STRUCTURAL RELIABILITY. THE THEORY AND PRACTICE</subject></subj-group></article-categories><title-group><article-title>АНАЛИЗ ПРОГНОЗИРОВАНИЯ НАДЕЖНОСТИ ДЛИННО-КАНАЛЬНЫХ ПОЛЕВЫХ ТРАНЗИСТОРОВ С ПРИМЕНЕНИЕМ СТЕПЕННОЙ ЗАВИСИМОСТИ СРОКА СЛУЖБЫ TL ОТ ТОКА ПОДЛОЖКИ ISUB</article-title><trans-title-group xml:lang="en"><trans-title>ANALYSIS OF PREDICTION OF RELIABILITY OF LONG-CHANNEL FIELD-EFFECT TRANSISTORS WITH APPLICATION OF POWER-LAW DEPENDENCE OF LIFETIME TL ON SUBSTRATE CURRENT ISUB</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Волков</surname><given-names>А. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Volkov</surname><given-names>A. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>аспирант</p></bio><bio xml:lang="en"><p>Postgraduate student</p></bio><email xlink:type="simple">artem.n.volkov@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru">ФГУП НИИ Физических проблем им. Ф.В.Лукина<country>Россия</country></aff><aff xml:lang="en">F.V. Lukin State Research Institute of Physical Problems<country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2015</year></pub-date><pub-date pub-type="epub"><day>06</day><month>07</month><year>2016</year></pub-date><volume>0</volume><issue>4</issue><fpage>47</fpage><lpage>56</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Волков А.Н., 2016</copyright-statement><copyright-year>2016</copyright-year><copyright-holder xml:lang="ru">Волков А.Н.</copyright-holder><copyright-holder xml:lang="en">Volkov A.N.</copyright-holder><license license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.dependability.ru/jour/article/view/102">https://www.dependability.ru/jour/article/view/102</self-uri><abstract><p>В работе исследовано влияние конструктивно-технологических параметров полевых металл-оксид-полупроводник-транзисторов (МОПТ) на прогнозирование надежности в степенной зависимости срока службы tL от тока подложки ISUB. Найдены конструктивно-технологические параметры, способные влиять на деградацию приборных характеристик МОПТ, вызванную инжекцией горячих носителей. Автор выражает благодарность научному руководителю, д.т.н., профессору Коробову А.И. за поддержку настоящей работы и ряд важных замечаний.</p></abstract><trans-abstract xml:lang="en"><p>This paper covers the influence of structural and technological parameters of field metal-oxidesemiconductor-transistors (MOSFET) on reliability prediction in power-law dependence of lifetime tL from substrate current of Isu. The structural and technological parameters capable to influence degradation of MOSFET instrument characteristics caused by injection of hot carriers are defined. The author would like to express his gratitude to the research supervisor, Doctor of Technical Sciences, Professor Korobov A.I. for support of the present paper and a number of important comments.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>прогнозирование надежности</kwd><kwd>срок службы</kwd><kwd>ток подложки</kwd><kwd>инжекция горячих носителей</kwd></kwd-group><kwd-group xml:lang="en"><kwd>reliability prediction</kwd><kwd>lifetime</kwd><kwd>substrate current</kwd><kwd>hot carrier injection</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Красников Г.Я. Конструктивно-технологические особенности субмикронных МОП-транзисторов. в 2-х частях. Часть 2. - Москва: Техносфера, 2004. - 536с.:ил.</mixed-citation><mixed-citation xml:lang="en">G.YJ.Krasnikov. Structural-technological features of submicronic MOS devices, in 2 parts. 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